Analytical Physical Model for Electrolyte Gated Organic Field Effect Transistors in the Helmholtz Approximation

The analytical physical modeling of undoped electrolyte gated organic field effect transistors (EGOFETs) in the Helmholtz approximation is presented. A compact model for current–voltage (I–V) characteristics, which includes effects access series resistance, has been derived and validated by means 2D finite element numerical calculations. describes all operating regimes continuously (subthreshold, linear, saturation regimes), covers channel lengths down to a few micrometres only device parameters. From model, expressions have proposed phenomenological parameters (e.g., capacitance, threshold voltage, sub-threshold slope capacitance) appearing commonly used ideal FET model. provides simple quantitative way analyze electrical characteristics EGOFETs EGOFET biosensors beyond use oversimplified